深圳市琅玥科技有限公司

IRFS4227TRLPBF

Features IRFS4227TRLPBF

Advanced Process Technology

Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications

Low E PULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications

Low QG for Fast Response

High Repetitive Peak Current Capability for
Reliable Operation

Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for
Improved Ruggedness

Repetitive Avalanche Capability for
Robustness and Reliability

IRFS4227TRLPBF
2Repetitive rating; pulse width limited by max. junction temperature.
 2Starting TJ = 25°C, L = 0.2mH, R G = 25Ω, IAS = 37A.

Pulse width ≤ 400μs; duty cycle ≤ 2%.
 Rθ is measured at T J of approximately 90°C.
 Half sine wave with duty cycle = 0.25, ton=1μsec.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.

IMPORTANT NOTICE IRFS4227TRLPBF
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.